Specification	SQS405ENW-T1_GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2650 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	39 W
Qualification	AEC-Q101
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SQS405 Series

Part	Grade	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Mounting Type	Package / Case	Package Name	Qualification	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SQS405EN-T1_GE3	Automotive	16 A	8 V	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8	AEC-Q101	2.5 V	4.5 V	20 mOhm	MOSFET (Metal Oxide)	P-Channel	2650 pF	39 W	12 V	1 V	75 nC	-55 °C	175 °C
Vishay Dale SQS405ENW-T1_GE3	Automotive	16 A	8 V	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8	AEC-Q101	2.5 V	4.5 V	20 mOhm	MOSFET (Metal Oxide)	P-Channel	2650 pF	39 W	12 V	1 V	75 nC	-55 °C	175 °C

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