IXFH23N60Q

Obsolete

IXYS

MOSFET N-CH 600V 23A TO247AD

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Obsolete

IXYS

MOSFET N-CH 600V 23A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH23N60Q

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id
IXYS IXFH23N60Q	10 V	-55 °C	150 °C	TO-247-3	N-Channel	23 A	90 nC	3300 pF	30 V	TO-247AD (IXFH)	400 W	Through Hole	600 V	320 mOhm	MOSFET (Metal Oxide)	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 23A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available