CSFC303-G

Active

Comchip Technology

DIODE GEN PURP 200V 3A DO214AB

Search across all available documentation for this part.

Active

Comchip Technology

DIODE GEN PURP 200V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	CSFC303-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

DIODE GEN PURP 200V 3A DO214AB

Part	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction	Package / Case	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)
Comchip Technology CSFC303-G	5 µA	Standard	150 °C	DO-214AB, SMC	200 mA, 500 ns	3 A	950 mV	200 V	Surface Mount	DO-214AB (SMC)	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available