JANS2N3499L/TR

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Microsemi Corporation

TRANS NPN 100V 0.5A TO5

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Microsemi Corporation

TRANS NPN 100V 0.5A TO5

Technical Specifications

Parameters and characteristics for this part

Specification	JANS2N3499L/TR

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Qualification	MIL-PRF-19500/366
Supplier Device Package	TO-5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Grade	Transistor Type	Vce Saturation (Max) @ Ib, Ic
Microsemi Corporation JANS2N3499L/TR	100	100 V	MIL-PRF-19500/366	500 mA	Through Hole	TO-5	TO-205AA TO-5-3 Metal Can	10 µA	Military	NPN	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 100 V 500 mA Through Hole TO-5

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