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BSZ075N08NS5ATMA1 - 8-PowerTDFN

BSZ075N08NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7.5 MOHM;

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BSZ075N08NS5ATMA1 - 8-PowerTDFN

BSZ075N08NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ075N08NS5ATMA1
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29.5 nC
Input Capacitance (Ciss) (Max) @ Vds2080 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackagePG-TSDSON-8-26
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.64
10$ 1.05
100$ 0.72
500$ 0.64
Digi-Reel® 1$ 1.64
10$ 1.05
100$ 0.72
500$ 0.64
Tape & Reel (TR) 5000$ 0.64

Description

General part information

BSZ075 Series

Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET BSZ084N08NS5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserver power supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.

Documents

Technical documentation and resources