MSC035SMA070B4N

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Microchip Technology

700V, 35 MOHM, DISCRETE MSIC™ MOSFET

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MSC035SMA070B4N

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Microchip Technology

700V, 35 MOHM, DISCRETE MSIC™ MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

MSC035SMA070 Series

MSC035SMA070 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	MSC035SMA070B4N

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On)	18 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	93 nC
Input Capacitance (Ciss) (Max)	1806 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4
Power Dissipation (Max)	304 W
Rds On (Max)	44 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5 V

MSC035SMA070 Series

700V, 35 mOhm, Discrete mSiC™ MOSFET

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max) Negative	Vgs (Max) Positive	Technology	Vgs(th) (Max)	Mounting Type	Package / Case	FET Type	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Microchip Technology MSC035SMA070B	283 W	2010 pF	700 V	99 nC	77 A	-10 V	25 V	SiCFET (Silicon Carbide)	2.7 V	Through Hole	TO-247-3	N-Channel	44 mOhm	TO-247-3	-55 °C	175 °C	20 V
Microchip Technology MSC035SMA070B4	283 W	2010 pF	700 V	99 nC	77 A	-10 V	23 V	SiCFET (Silicon Carbide)	2.7 V	Through Hole	TO-247-4	N-Channel	44 mOhm	TO-247-4	-55 °C	175 °C	20 V
Microchip Technology MSC035SMA070S	206 W	2010 pF	700 V	99 nC	65 A	-10 V	23 V	SiCFET (Silicon Carbide)	2.7 V	Surface Mount	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	44 mOhm	D3PAK	-55 °C	175 °C	20 V
Microchip Technology MSC035SMA070D/S
Microchip Technology MSC035SMA070B4N	304 W	1806 pF	700 V	93 nC	75 A	-10 V	23 V	SiCFET (Silicon Carbide)	5 V	Through Hole	TO-247-4	N-Channel	44 mOhm	TO-247-4	-55 °C	175 °C		20 V	18 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MSC035SMA070D/S 700V, 35 mOhm mSiC™ MOSFET Die Datasheet

MSC035SMA070B 700V, 35 mOhm mSiC™ MOSFET TO-247 Datasheet

MSC035SMA070S 700V, 35 mOhm mSiC™ MOSFET TO-268 Datasheet

MSC035SMA070B4 700V, 35 mOhm mSiC™ MOSFET TO-247-4 Datasheet

MSC035SMA070B4N 700V, 35 mOhm mSiC™ MOSFET TO-247-4L Notch Datasheet

MSC035SMA070B4N | Datasheet