STP13NM60ND

Obsolete

STMicroelectronics

MOSFET, N-CH, 600V, 11A, 150DEG C, 109W

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Alpha

STP13NM60ND

Obsolete

STMicroelectronics

MOSFET, N-CH, 600V, 11A, 150DEG C, 109W

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

STP13 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Technical Specifications

Parameters and characteristics for this part

Specification	STP13NM60ND

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24.5 nC
Input Capacitance (Ciss) (Max)	845 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	109 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STP13 Series

N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220 package

Part	Vgs (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Package Name	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STP13N65M2	25 V	TO-220-3	N-Channel	10 V	4 V	590 pF	650 V	110 W	150 °C	TO-220	430 mOhm	10 A	17 nC	MOSFET (Metal Oxide)	Through Hole
STMicroelectronics STP13NK60Z	30 V	TO-220-3	N-Channel	10 V	4.5 V	2030 pF	600 V	150 W		TO-220	550 mOhm 550 mOhm	13 A	92 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C
STMicroelectronics STP13NM60N	25 V	TO-220-3	N-Channel	10 V	4 V	790 pF 790 pF	600 V	90 W		TO-220	360 mOhm	11 A	30 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C
STMicroelectronics STP13NM60ND	25 V	TO-220-3	N-Channel	10 V	5 V	845 pF	600 V	109 W		TO-220	380 mOhm	11 A	24.5 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

STP13NM60ND | Datasheet

Technical Data Sheet EN

Product Change Notice EN