STP13NM60ND

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STMicroelectronics

MOSFET, N-CH, 600V, 11A, 150DEG C, 109W

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DocumentsTechnical Data Sheet EN Product Change Notice EN +1

STP13NM60ND

Active

STMicroelectronics

MOSFET, N-CH, 600V, 11A, 150DEG C, 109W

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Product Change Notice EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP13NM60ND

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24.5 nC
Input Capacitance (Ciss) (Max) @ Vds	845 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	109 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP13N65M2 Series

N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package

Part	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STP13N65M2	MOSFET (Metal Oxide)	TO-220-3	10 A	110 W	25 V	10 V	N-Channel	650 V	150 °C	590 pF	TO-220	4 V	430 mOhm	Through Hole	17 nC
STMicroelectronics STP13NK60Z	MOSFET (Metal Oxide)	TO-220-3	13 A		30 V	10 V	N-Channel	600 V		2030 pF	TO-220	4.5 V	550 mOhm	Through Hole	92 nC	-55 °C	150 °C	150 W
STMicroelectronics STP13NM60N	MOSFET (Metal Oxide)	TO-220-3	11 A		25 V	10 V	N-Channel	600 V		790 pF	TO-220	4 V	360 mOhm	Through Hole	30 nC	-55 °C	150 °C	90 W
STMicroelectronics STP13NM60ND	MOSFET (Metal Oxide)	TO-220-3	11 A	109 W	25 V	10 V	N-Channel	600 V		845 pF	TO-220	5 V	380 mOhm	Through Hole		-55 °C	150 °C		24.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.83
		50	$ 3.03
		100	$ 2.60
		500	$ 2.31
		1000	$ 1.98
		2000	$ 1.86
		5000	$ 1.79
Newark	Each	1	$ 2.23

Description

General part information

STP13N65M2 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet