Specification	GBL10

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	GBL, 4-SIP
Package Name	GBL
Technology	Standard
Voltage - Forward (Vf) (Max)	1.1 V
Voltage - Peak Reverse (Max)	1000 V

GBL Series

Part	Voltage - Forward (Vf) (Max)	Diode Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max)	Current - Reverse Leakage	Package Name
GeneSiC Semiconductor GBL08	1 V	Single Phase	-55 °C	150 °C	Through Hole	Standard	4-SIP GBL	4 A	800 V	10 µA	GBL
GeneSiC Semiconductor GBL10	1.1 V	Single Phase	-55 °C	150 °C	Through Hole	Standard	4-SIP GBL	4 A	1000 V	5 µA	GBL
GeneSiC Semiconductor GBL08	1 V	Single Phase	-55 °C	150 °C	Through Hole	Standard	4-SIP GBL	4 A	800 V	10 µA	GBL
GeneSiC Semiconductor GBL10	1.1 V	Single Phase	-55 °C	150 °C	Through Hole	Standard	4-SIP GBL	4 A	1000 V	5 µA	GBL

Pricing

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