STU95N2LH5

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STMicroelectronics

MOSFET N-CH 25V 80A IPAK

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STMicroelectronics

MOSFET N-CH 25V 80A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU95N2LH5

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1817 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 25V 80A IPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Technology	FET Type
STMicroelectronics STU95N2LH5	-55 °C	175 ░C	10 V	5 V	25 V	70 W	TO-251 (IPAK)	25 V	1817 pF	1 V	13.4 nC	IPAK, TO-251-3 Short Leads, TO-251AA	Through Hole	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources