SCT4013DW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 98 A, 750 V, 0.013 OHM, TO-263
SCT4013DW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 98 A, 750 V, 0.013 OHM, TO-263
Description
General part information
SCT4013DW7 Series
SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4013DW7TL |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 98 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 170 nC |
| Input Capacitance (Ciss) (Max) | 4580 pF, 4580 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package Leads | 7 Leads |
| Package Name | TO-263-7L, D2PAK |
| Power Dissipation (Max) | 267 W |
| Rds On (Max) | 16.9 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 21 V |
| Vgs(th) (Max) | 4.8 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
How to Use LTspice® Models: Tips for Improving Convergence
How to Use PSIM Models
About Export Administration Regulations (EAR)
Condition of Soldering
Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs
About Flammability of Materials
θ<sub>JA</sub> and Ψ<sub>JT</sub>
What is a Thermal Model? (SiC Power Device)
5kW Inverter Circuit Using 4th Generation SiC MOSFETs
Design Method for Comparator-less Miller Clamp Circuits
Moisture Sensitivity Level
Thermal Resistance Measurement Method for SiC MOSFET
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
How to Use Thermal Models
Method for Monitoring Switching Waveform
New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!
How to Suppress the Parallel Drive Oscillation in SiC Modules
TO-263-7L Explanation for Marking
Oscillation countermeasures for MOSFETs in parallel
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
Types and Features of Transistors
5kW High-Efficiency Fan-less Inverter
Importance of Probe Calibration When Measuring Power: Deskew
What Is Thermal Design
Precautions during gate-source voltage measurement for SiC MOSFET
TO-263-7L Taping Information
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Gate-source voltage behaviour in a bridge configuration
Precautions for Thermal Resistance of Insulation Sheet
Snubber circuit design methods for SiC MOSFET
800V Three-Phase Output LLC DC/DC Resonant Converter
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
How to Use LTspice® Models
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Compliance of the ELV directive
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Calculating Power Loss from Measured Waveforms
Basics and Design Guidelines for Gate Drive Circuits
Anti-Whisker formation
How to Use PLECS Models
4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note
Measurement Method and Usage of Thermal Resistance RthJC
TO-263-7L Inner Structure
Improvement of switching loss by driver source
SiC MOSFET Layout Design Considerations
Application Benefits of Using 4<sup>th</sup> Generation SiC MOSFETs
Application Note for SiC Power Devices and Modules
PCB Layout Thermal Design Guide
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Calculation of Power Dissipation in Switching Circuit
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Precautions When Measuring the Rear of the Package with a Thermocouple
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
Two-Resistor Model for Thermal Simulation
TO-263-7L Package Dimensions
Part Explanation
Solving the challenges of driving SiC MOSFETs with new packaging developments
Impedance Characteristics of Bypass Capacitor
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Judgment Criteria of Thermal Evaluation
Notes for Calculating Power Consumption:Static Operation
Notes for Temperature Measurement Using Thermocouples
Basics of Thermal Resistance and Heat Dissipation
How to measure the oscillation occurs between parallel-connected devices
θ<sub>JC</sub> and Ψ<sub>JT</sub>
4 Steps for Successful Thermal Designing of Power Devices
Gate-Source Voltage Surge Suppression Methods