
RJU003N03FRAT106
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 0.3A, UMT ROHS COMPLIANT: YES

RJU003N03FRAT106
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 0.3A, UMT ROHS COMPLIANT: YES
Description
General part information
RJU003 Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | RJU003N03FRAT106 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 300 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 24 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | UMT3 |
| Power Dissipation (Max) | 200 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.1 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Taping Information
Notes for Temperature Measurement Using Thermocouples
About Export Regulations
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
What is a Thermal Model? (Transistor)
Reliability Test Result
About Flammability of Materials
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Impedance Characteristics of Bypass Capacitor
Temperature derating method for Safe Operating Area (SOA)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
RJU003N03FRA Data Sheet
Importance of Probe Calibration When Measuring Power: Deskew
MOSFET Gate Drive Current Setting for Motor Driving
How to Use the Thermal Resistance and Thermal Characteristics Parameters
How to Create Symbols for PSpice Models
Explanation for Marking
Certificate of not containing SVHC under REACH Regulation
Calculation of Power Dissipation in Switching Circuit
Compliance of the RoHS directive
Anti-Whisker formation - Transistors
MOSFET Gate Resistor Setting for Motor Driving
Moisture Sensitivity Level - Transistors
How to Use LTspice® Models: Tips for Improving Convergence
Two-Resistor Model for Thermal Simulation
Types and Features of Transistors
Package Dimensions
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Method for Monitoring Switching Waveform
PCB Layout Thermal Design Guide
What Is Thermal Design
Condition of Soldering / Land Pattern Reference
List of Transistor Package Thermal Resistance
Notes for Calculating Power Consumption:Static Operation
Judgment Criteria of Thermal Evaluation
Basics of Thermal Resistance and Heat Dissipation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Precautions When Measuring the Rear of the Package with a Thermocouple
Part Explanation
ESD Data
Measurement Method and Usage of Thermal Resistance RthJC
How to Use LTspice® Models