IXTP75N10P

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IXYS

MOSFET N-CH 100V 75A TO220AB

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IXYS

MOSFET N-CH 100V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP75N10P

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
IXYS IXTP75N10P	-55 °C	175 ░C	N-Channel	TO-220-3	360 W	TO-220-3	MOSFET (Metal Oxide)	25 mOhm	100 V	74 nC	75 A	5.5 V	10 V	20 V	2250 pF	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A (Tc) 360W (Tc) Through Hole TO-220-3

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