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STS6NF20V - 8-SOIC

STS6NF20V

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STMicroelectronics

N-CHANNEL 20 V, 30 MOHM TYP., 6 A, 2.7 V DRIVE STRIPFET II POWER MOSFET IN AN SO-8 PACKAGE

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STS6NF20V - 8-SOIC

STS6NF20V

Active
STMicroelectronics

N-CHANNEL 20 V, 30 MOHM TYP., 6 A, 2.7 V DRIVE STRIPFET II POWER MOSFET IN AN SO-8 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS6NF20V
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.95 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11.5 nC
Input Capacitance (Ciss) (Max) @ Vds460 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id600 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.80
10$ 0.69
100$ 0.48
500$ 0.40
1000$ 0.34
Digi-Reel® 1$ 0.80
10$ 0.69
100$ 0.48
500$ 0.40
1000$ 0.34
Tape & Reel (TR) 2500$ 0.30
5000$ 0.29
12500$ 0.27
25000$ 0.26
NewarkEach (Supplied on Cut Tape) 1$ 0.98
10$ 0.74
25$ 0.67
50$ 0.60
100$ 0.53
250$ 0.49
500$ 0.46
1000$ 0.40

Description

General part information

STS6NF20V Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.