STS6NF20V

LTB

STMicroelectronics

N-CHANNEL 20 V, 30 MOHM TYP., 6 A, 2.7 V DRIVE STRIPFET II POWER MOSFET IN AN SO-8 PACKAGE

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STS6NF20V

LTB

STMicroelectronics

N-CHANNEL 20 V, 30 MOHM TYP., 6 A, 2.7 V DRIVE STRIPFET II POWER MOSFET IN AN SO-8 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STS6NF20V Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Technical Specifications

Parameters and characteristics for this part

Specification	STS6NF20V

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.95 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	11.5 nC
Input Capacitance (Ciss) (Max)	460 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	600 mV

STS6NF20V Series

N-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package

Part	FET Type	Package Length	Package Name	Package Width	Operating Temperature	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)
STMicroelectronics STS6NF20V	N-Channel	0.154 in	8-SOIC	3.9 mm	150 °C	MOSFET (Metal Oxide)	4.5 V	1.95 V	40 mOhm	600 mV	6 A	2.5 W	12 V	460 pF	11.5 nC	Surface Mount	20 V