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STWA30N65DM6AG - TO-247-3

STWA30N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 90 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+23
STWA30N65DM6AG - TO-247-3

STWA30N65DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 90 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsDatasheet+23

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA30N65DM6AG
Current - Continuous Drain (Id) @ 25°C28 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]284 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.34
10$ 3.62
100$ 3.17

Description

General part information

STWA30N65DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.