BCR 169F E6327

Obsolete

Infineon Technologies

TRANS PREBIAS PNP 50V TSFP-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

TRANS PREBIAS PNP 50V TSFP-3

Technical Specifications

Parameters and characteristics for this part

Specification	BCR 169F E6327

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	250 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	PG-TSFP-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
Infineon Technologies BCR 169F E6327	100 nA	300 mV	Surface Mount	120	SOT-723	PNP - Pre-Biased	4.7 kOhms	50 V	200 MHz	250 mW	PG-TSFP-3	100 mA
Infineon Technologies BCR 169L3 E6327	100 nA	300 mV	Surface Mount	120	SC-101 SOT-883	PNP - Pre-Biased	4.7 kOhms	50 V	200 MHz	250 mW	PG-TSLP-3-4	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-TSFP-3

Technical documentation and resources

No documents available