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STB36N60M6

STB36N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE

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STB36N60M6

STB36N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE

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Description

General part information

STB36N60M6 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB36N60M6
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44.3 nC
Input Capacitance (Ciss) (Max)1960 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)208 W
Rds On (Max)99 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4.75 V

Pricing

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CAD

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