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1N5550USE3

1N5550USE3

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 200V, 5A, 2000NS B-MELF BAG

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1N5550USE3

1N5550USE3

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 200V, 5A, 2000NS B-MELF BAG

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Description

General part information

1N5550US-E3-Rectifier Series

This "standard recovery" surface mount rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds.

Technical Specifications

Parameters and characteristics for this part

Specification1N5550USE3
Current - Average Rectified (Io)3 A
Current - Reverse Leakage1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseSQ-MELF, B
Package NameSQ-MELF, B
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max)1.2 V

Pricing

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CAD

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