CMS01(TE12L)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMS01(TE12L)

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	200 mA, 500 ns
Supplier Device Package	M-FLAT (2.4x3.8)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	370 mV

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package
Toshiba Semiconductor and Storage CMS01(TE12L)	370 mV	200 mA 500 ns	3 A	SOD-128	Surface Mount	5 mA	30 V	125 °C	-40 °C	Schottky	M-FLAT (2.4x3.8)
Toshiba Semiconductor and Storage CMS01(TE12L,Q,M)	370 mV	200 mA 500 ns	3 A	SOD-128	Surface Mount	5 mA	30 V	125 °C	-40 °C	Schottky	M-FLAT (2.4x3.8)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 3A Surface Mount M-FLAT (2.4x3.8)

Technical documentation and resources