IXTQ150N06P

Obsolete

IXYS

MOSFET N-CH 60V 150A TO3P

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 60V 150A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ150N06P

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
IXYS IXTQ150N06P	Through Hole	480 W	60 V	20 V	150 A	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	TO-3P	10 mOhm	118 nC	10 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 150A (Tc) 480W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available