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STTH12010TV1 - ISOTOP

STTH12010TV1

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STMicroelectronics

1200 V, 120 A DUAL ULTRAFAST DIODE

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STTH12010TV1 - ISOTOP

STTH12010TV1

Active
STMicroelectronics

1200 V, 120 A DUAL ULTRAFAST DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH12010TV1
Current - Average Rectified (Io) (per Diode)60 A
Current - Reverse Leakage @ Vr20 µA
Diode Configuration2 Independent
Mounting TypeChassis Mount
Operating Temperature - Junction150 °C
Package / CaseISOTOP
Reverse Recovery Time (trr)115 ns
Speed200 mA, 500 ns
Supplier Device PackageISOTOP®
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 25.12
10$ 22.32
100$ 19.53
500$ 16.66

Description

General part information

STTH12010TV Series

The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. This diode also fits into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of equipment.