DCG85X1200NA
ObsoleteLITTELFUSE
PWR DIODE DISC-SCHOTTKY SOT-227B MINIBLC
DCG85X1200NA
ObsoleteLITTELFUSE
PWR DIODE DISC-SCHOTTKY SOT-227B MINIBLC
Description
General part information
DCG85X1200NA Series
1200V, 2x40A parallel SiC Schottky diodes to reduce the component count in rectifier bridges, or for increased current density. Made of SiC material, these diodes are recommended for fast switching applications, and for systems with a need to reduce the power losses and increase the power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | DCG85X1200NA |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 43 A |
| Current - Reverse Leakage | 400 µA |
| Diode Configuration | Independent |
| Diode Count | 2 |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227B |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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