SFAF1004GHC0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 10A ITO220AC

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 10A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SFAF1004GHC0G

Capacitance @ Vr, F	170 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Qualification	Technology	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed
Taiwan Semiconductor Corporation SFAF1004GHC0G	150 °C	-55 °C	170 pF	AEC-Q101	Standard	10 A	ITO-220AC	Through Hole	35 ns	TO-220-2 Full Pack	200 V	Automotive	975 mV	10 µA	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 10A Through Hole ITO-220AC

Technical documentation and resources

No documents available