TQM250NB06CR RLG

Active

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 7A/32A 8PDFNU

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 7A/32A 8PDFNU

Technical Specifications

Parameters and characteristics for this part

Specification	TQM250NB06CR RLG

Current - Continuous Drain (Id) @ 25°C	7 A, 32 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1396 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Qualification	Power Dissipation (Max)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Grade	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TQM250NB06CR RLG	AEC-Q101	3.1 W 68 W	N-Channel	20 V	24 nC	8-PowerTDFN	-55 °C	175 ░C	7 A 32 A	1396 pF	3.8 V	Automotive	Surface Mount Wettable Flank	25 mOhm	MOSFET (Metal Oxide)	8-PDFNU (5x6)	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 7A (Ta), 32A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources