IR2128SPBF

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Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8SOIC

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Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR2128SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

Part	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Driven Configuration	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Gate Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Mounting Type	Channel Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2128STRPBF	600 V	8-SOIC	High-Side Low-Side	0.8 V 3 V	8-SOIC	3.9 mm	0.154 in	IGBT MOSFET N-Channel MOSFET	12 V	20 V	150 °C	-40 °C	80 ns	40 ns	Inverting	Surface Mount	Single	1	500 mA	250 mA
Infineon Technologies IR2128S	600 V	8-SOIC	High-Side Low-Side	0.8 V 3 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	12 V	20 V	150 °C	-40 °C	80 ns	40 ns	Inverting	Surface Mount	Single	1	500 mA	250 mA
Infineon Technologies IR2128SPBF	600 V	8-SOIC	High-Side Low-Side	0.8 V 3 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	12 V	20 V	150 °C	-40 °C	80 ns	40 ns	Inverting	Surface Mount	Single	1	500 mA	250 mA
Infineon Technologies IR2128	600 V	8-PDIP	High-Side Low-Side	0.8 V 3 V	8-DIP			IGBT N-Channel MOSFET	12 V	20 V	150 °C	-40 °C	80 ns	40 ns	Inverting	Through Hole	Single	1	500 mA	250 mA	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side or Low-Side Gate Driver IC Inverting 8-SOIC

Technical documentation and resources