IPW65R041CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 41 MOHM;

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IPW65R041CFD7XKSA1

Active

Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 41 MOHM;

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R041CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	4975 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

IPW65R041 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)
Infineon Technologies IPW65R041CFD7XKSA1	10 V	MOSFET (Metal Oxide)	41 mOhm	50 A	227 W	TO-247-3	4975 pF	102 nC	N-Channel	PG-TO247-3	-55 °C	150 °C	650 V	Through Hole	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.68
		30	$ 6.93
		120	$ 6.20
		510	$ 5.47
		1020	$ 4.93
		2010	$ 4.62
Newark	Each	1	$ 11.10
		10	$ 10.31
		25	$ 7.90
		50	$ 7.47
		100	$ 7.03
		480	$ 7.02
		720	$ 6.72

Description

General part information

IPW65R041 Series

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPW65R041CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.