IPP60R074C6XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 57.7A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPP60R074C6XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 57.7A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R074C6XKSA1

Current - Continuous Drain (Id) @ 25°C	57.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	138 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	480.8 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPP60R Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IPP60R520C6XKSA1	512 pF	-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	66 W	8.1 A	TO-220-3	MOSFET (Metal Oxide)	520 mOhm	20 V	23.4 nC	Through Hole
Infineon Technologies IPP60R600CPXKSA1		-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	60 W	6.1 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	600 mOhm	3.5 V	550 pF	27 nC
Infineon Technologies IPP60R1K4C6XKSA1		-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	28.4 W	3.2 A	TO-220-3	MOSFET (Metal Oxide)		20 V	1.1 nC	Through Hole	1.4 Ohm	3.5 V	200 pF
Infineon Technologies IPP60R074C6XKSA1		-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	480.8 W	57.7 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	74 mOhm	3.5 V		138 nC
Infineon Technologies IPP60R600C6XKSA1	440 pF	-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	63 W	7.3 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	600 mOhm	3.5 V		20.5 nC
Infineon Technologies IPP60R600E6XKSA1	440 pF	-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	63 W	7.3 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	600 mOhm	3.5 V		20.5 nC
Infineon Technologies IPP60R950C6XKSA1		-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3		4.4 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	950 mOhm	3.5 V	280 pF	13 nC	37 W
Infineon Technologies IPP60R750E6XKSA1	373 pF	-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	48 W	5.7 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	750 mOhm	3.5 V		17.2 nC
Infineon Technologies IPP60R600P6XKSA1	557 pF	-55 °C	150 °C	10 V	N-Channel	600 V	PG-TO220-3	63 W	7.3 A	TO-220-3	MOSFET (Metal Oxide)		20 V		Through Hole	600 mOhm	4.5 V		12 nC
Infineon Technologies IPP60R520CPXKSA1	630 pF	-55 °C	150 °C	10 V	N-Channel	650 V	PG-TO220-3	66 W	6.8 A	TO-220-3	MOSFET (Metal Oxide)	520 mOhm	20 V	31 nC	Through Hole		3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP60R Series

N-Channel 600 V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources