BCR192E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

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Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCR192E6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	PG-SOT23
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)
Infineon Technologies BCR192E6327HTSA1	PG-SOT23	200 mW	70	100 nA	Surface Mount	47000 Ohms	300 mV	100 mA	PNP - Pre-Biased	200 MHz	SC-59 SOT-23-3 TO-236-3	50 V	22 kOhms
Infineon Technologies BCR192WE6327HTSA1	PG-SOT323	250 mW	70	100 nA	Surface Mount	47000 Ohms	300 mV	100 mA	PNP - Pre-Biased	200 MHz	SC-70 SOT-323	50 V	22 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

Technical documentation and resources

No documents available