RN2404,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN2404,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	S-Mini
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Base (R1)	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)
Toshiba Semiconductor and Storage RN2404,LF	47 kOhms	200 mW	50 V	PNP - Pre-Biased	SC-59 SOT-23-3 TO-236-3	80	300 mV	100 mA	Surface Mount	200 MHz	500 nA	S-Mini	47000 Ohms
Toshiba Semiconductor and Storage RN2404TE85LF	47 kOhms	200 mW	50 V	PNP - Pre-Biased	SC-59 SOT-23-3 TO-236-3	80	300 mV	100 mA	Surface Mount	200 MHz	500 nA	S-Mini	47000 Ohms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources