RFG40N10

Obsolete

Harris Corporation

N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Obsolete

Harris Corporation

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RFG40N10

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-CHANNEL POWER MOSFET

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology
Harris Corporation RFG40N10	TO-247-3	10 V	300 nC	100 V	Through Hole	-55 °C	175 ░C	TO-247-3	N-Channel	4 V	40 mOhm	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	210	$ 1.44

General part information

N-Channel 100 V 40A (Tc) 160W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available