Specification	BYV26C-TR

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, SOD-57
Package Name	SOD-57
Reverse Recovery Time (trr)	30 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	2.5 V, 2.5 V

BYV26 Series

Part	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package Name	Voltage - Forward (Vf) (Max)	Capacitance	Package / Case
Vishay General Semiconductor - Diodes Division BYV26EGPHE3/73	1 kV	5 µA	500 ns	200 mA	175 °C	-65 °C	Standard	Through Hole	1 A	75 ns	DO-204AC (DO-15)	2.5 V 2.5 V	15 pF	Axial DO-15 DO-204AC
Vishay General Semiconductor - Diodes Division BYV26B-TR	400 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	30 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26C-TR	600 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	30 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26EGP-E3/54	1 kV	5 µA	500 ns	200 mA	175 °C	-65 °C	Standard	Through Hole	1 A	75 ns	DO-204AC (DO-15)	2.5 V 2.5 V	15 pF	Axial DO-15 DO-204AC
Vishay General Semiconductor - Diodes Division BYV26D-TAP	800 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	75 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26A-TAP	200 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	30 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26A-TR	200 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	30 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26B-TAP	400 V	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	30 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26E-TAP	1 kV	5 µA	500 ns	200 mA	175 °C	-55 °C	Avalanche	Through Hole	1 A	75 ns	SOD-57	2.5 V 2.5 V		Axial SOD-57
Vishay General Semiconductor - Diodes Division BYV26EGP-E3/73	1 kV	5 µA	500 ns	200 mA	175 °C	-65 °C	Avalanche	Through Hole	1 A	75 ns	DO-204AC (DO-15)	2.5 V 2.5 V	15 pF	Axial DO-15 DO-204AC

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BYV26C-TR | Datasheet