STY100NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +19

STY100NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +19

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STY100NM60N	STY100 Series

Current - Continuous Drain (Id) @ 25°C	98 A	98 - 100 A
Drain to Source Voltage (Vdss)	600 V	200 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC	330 - 360 nC
Input Capacitance (Ciss) (Max) @ Vds	9600 pF	9600 pF
Input Capacitance (Ciss) (Max) @ Vds	-	7900 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	-	150 °C
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	625 W	450 - 625 W
Rds On (Max) @ Id, Vgs	29 mOhm	24 - 29 mOhm
Supplier Device Package	MAX247™	MAX247™
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	-	20 V
Vgs (Max) [Max]	25 V	25 V
Vgs(th) (Max) @ Id	4 V	4 V

STY100 Series

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Part	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Operating Temperature
STMicroelectronics STY100NM60N	MOSFET (Metal Oxide)	4 V	600 V	29 mOhm	330 nC	10 V	625 W	MAX247™	N-Channel	TO-247-3	98 A	-55 °C	150 °C	25 V	Through Hole	9600 pF
STMicroelectronics STY100NS20FD	MOSFET (Metal Oxide)	4 V	200 V	24 mOhm	360 nC	10 V	450 W	MAX247™	N-Channel	TO-247-3	100 A				Through Hole		7900 pF	20 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 26.77
		30	$ 22.20
		120	$ 20.81
		510	$ 17.76
Newark	Each	1	$ 22.47

Description

General part information

STY100 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STY100NM60N

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STY100NM60N

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Technical Specifications

STY100 Series

Pricing

Description

STY100 Series

Documents

Product Change Notice EN

Technical Data Sheet EN

UM1575

DS8656

AN4337

AN4250

TN1225

AN2344

TN1378

AN2842

TN1224

TN1156

Datasheet

Datasheet

Technical Specifications

STY100 Series