BCM856SE6327BTSA1

Obsolete

Infineon Technologies

TRANS 2PNP 65V 0.1A PG-SOT363-PO

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Obsolete

Infineon Technologies

TRANS 2PNP 65V 0.1A PG-SOT363-PO

Technical Specifications

Parameters and characteristics for this part

Specification	BCM856SE6327BTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	65 V

Part	Mounting Type	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]
Infineon Technologies BCM856SE6327BTSA1	Surface Mount	6-VSSOP SC-88 SOT-363	250 mW	200	15 nA	PG-SOT363-PO	2 PNP (Dual)	250 MHz	650 mV	65 V	150 °C	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources