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INFINEON 1EDN7512GXTMA1

1EDN7512GXTMA1

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INFINEON

EICEDRIVER™ LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-WSON-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS.

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INFINEON 1EDN7512GXTMA1

1EDN7512GXTMA1

Active
INFINEON

EICEDRIVER™ LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-WSON-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS.

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Description

General part information

1EDN7512 Series

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible

Technical Specifications

Parameters and characteristics for this part

Specification1EDN7512GXTMA1
Channel TypeSingle
Current - Peak Output (Sink)8 A
Current - Peak Output (Source)4 A
Driven ConfigurationLow-Side
Fall Time (Typ)4.5 ns
Gate ChannelN-Channel
Gate TypeMOSFET, GaN FET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)20 V
Input TypeInverting, Non-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / Case6-WDFN Exposed Pad
Package NamePG-WSON-6-1
Rise Time (Typ)6.5 ns
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)4.5 V

Pricing

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CAD

3D models and CAD resources for this part