TPN8R903NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0089 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
TPN8R903NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0089 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Description
General part information
TPN8R903NL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0089 Ω@10V, TSON Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN8R903NL,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.8 nC |
| Input Capacitance (Ciss) (Max) | 820 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 700 mW, 22 W |
| Rds On (Max) | 8.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design part3
Structures and Characteristics: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Calculating the Temperature of Discrete Semiconductor Devices
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Resonant Circuits and Soft Switching
Motor Control (Vacuum Cleaners)
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Electrical Characteristics: Power MOSFET Application Notes
TPN8R903NL Data sheet/English
Maximum Ratings: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Selection Guide MOSFETs 2025 Rev1.0
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Avalanche energy calculation
MOSFET SPICE model grade
TPN8R903NL Data sheet/Japanese
MOSFET Self-Turn-On Phenomenon
Simplified CFD Model Application Note
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode