Specification	SI2306BDS-T1-E3

Current - Continuous Drain (Id) (Ta)	3.16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4.5 nC
Input Capacitance (Ciss) (Max)	305 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	750 mW
Rds On (Max)	47 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI2 Series

Part	Package / Case	Vgs(th) (Max)	Package Name	Power Dissipation (Max)	FET Type	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI2329DS-T1-GE3	SC-59 SOT-23-3 TO-236-3	800 mV	SOT-23-3 (TO-236)	2.5 W	P-Channel	5 V	30 mOhm	8 V	6 A	29 nC	MOSFET (Metal Oxide)	1485 pF	-55 °C	150 °C	Surface Mount
Vishay Dale SI2312BDS-T1-GE3	SC-59 SOT-23-3 TO-236-3	850 mV	SOT-23-3 (TO-236)	750 mW	N-Channel	8 V	31 mOhm	20 V		12 nC	MOSFET (Metal Oxide)		-55 °C	150 °C	Surface Mount	4.5 V	1.8 V	3.9 A
Vishay Dale SI2309CDS-T1-E3	SC-59 SOT-23-3 TO-236-3	3 V	SOT-23-3 (TO-236)	1 W 1.7 W	P-Channel	20 V	345 mOhm	60 V	1.6 A	4.1 nC	MOSFET (Metal Oxide)	210 pF	-55 °C	150 °C	Surface Mount	10 V	4.5 V
Vishay Dale SI2307CDS-T1-E3	SC-59 SOT-23-3 TO-236-3	3 V	SOT-23-3 (TO-236)	1.1 W 1.8 W	P-Channel	20 V	88 mOhm	30 V	3.5 A	6.2 nC	MOSFET (Metal Oxide)	340 pF	-55 °C	150 °C	Surface Mount	10 V	4.5 V
Vishay Dale SI2306BDS-T1-E3	SC-59 SOT-23-3 TO-236-3	3 V	SOT-23-3 (TO-236)	750 mW	N-Channel	20 V	47 mOhm	30 V		4.5 nC	MOSFET (Metal Oxide)	305 pF	-55 °C	150 °C	Surface Mount	10 V	4.5 V	3.16 A

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