
PXP018-20QXJ
ActiveNexperia USA Inc.
TRANSISTOR MOSFET P-CHANNEL -20V 13.7A 3-PIN SOT8002-1

PXP018-20QXJ
ActiveNexperia USA Inc.
TRANSISTOR MOSFET P-CHANNEL -20V 13.7A 3-PIN SOT8002-1
Description
General part information
PXP018-20QX Series
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PXP018-20QXJ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8.4 A |
| Current - Continuous Drain (Id) (Tc) | 39.7 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 34.8 nC |
| Input Capacitance (Ciss) (Max) | 2360 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | MLPAK33 |
| Power Dissipation (Max) | 1.8 W, 50 W |
| Rds On (Max) | 18 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.25 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
PXP018-20QXJ | Datasheet
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