DMP210DUFB4-7

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMP210DUFB4-7

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

NRND = Not Recommended for New Design

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Configuration	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs (Max)
Diodes Inc DMP210DUDJ-7	SOT-963	27.44 pF	200 mA	SOT-963	2 P-Channel	5.5 Ohm	MOSFET (Metal Oxide)	330 mW	1.15 V	20 V	-55 °C	150 °C	Surface Mount	Logic Level Gate
Diodes Inc DMP210DUFB4-7			200 mA	3-XFDFN			MOSFET (Metal Oxide)		1 V	20 V	-55 °C	150 °C	Surface Mount		5 Ohm	1.2 V 4.5 V	P-Channel	175 pF	350 mW	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources