PSMNR90-80ASEJ

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Nexperia USA Inc.

N-CHANNEL, 80 V, 0.9 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

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PSMNR90-80ASEJ

Active

Nexperia USA Inc.

N-CHANNEL, 80 V, 0.9 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMNR90-80ASE Series

N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR90-80ASEJ

Current - Continuous Drain (Id) (Tc)	495 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	504 nC
Input Capacitance (Ciss) (Max)	36802 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Features	Exposed Pad
Package Length	0.37 in
Package Name	12-BESOP, CCPAK1212
Package Width	9.4 mm
Power Dissipation (Max)	1.55 kW
Rds On (Max)	0.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.6 V

PSMNR90-80ASE Series

N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Part	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package Name	Package Features	Package Width	Package Length	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)
Nexperia USA Inc. PSMNR90-80ASEJ	3.6 V	36802 pF	12-BESOP CCPAK1212	Exposed Pad	9.4 mm	0.37 in	495 A	20 V	10 V	504 nC	MOSFET (Metal Oxide)	-55 °C	175 °C	Surface Mount	0.9 mOhm	80 V	N-Channel	1.55 kW