Specification	SIL03N10-TP

Current - Continuous Drain (Id) (Ta)	3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19.2 nC
Input Capacitance (Ciss) (Max)	810 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-23-6
Package Name	SOT-23-6L
Power Dissipation (Max)	1.5 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SIL03N10 Series

Part	FET Type	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Package Name	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)
MCC (Micro Commercial Components) SIL03N10-TP	N-Channel	1.5 W	Surface Mount	120 mOhm	100 V	-55 °C	150 °C	SOT-23-6	SOT-23-6L	MOSFET (Metal Oxide)	10 V	4.5 V	2.5 V	810 pF	19.2 nC	3 A	20 V
MCC (Micro Commercial Components) SIL03N10-TP	N-Channel	1.5 W	Surface Mount	120 mOhm	100 V	-55 °C	150 °C	SOT-23-6	SOT-23-6L	MOSFET (Metal Oxide)	10 V	4.5 V	2.5 V	810 pF	19.2 nC	3 A	20 V

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