Specification	IGT60R190D1SATMA1

Current - Continuous Drain (Id) (Tc)	12.5 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	157 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerSFN
Package Name	PG-HSOF-8-3
Power Dissipation (Max)	55.5 W
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	-10 V
Vgs(th) (Max)	1.6 V

IGT60R190 Series

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Package Name	Drain to Source Voltage (Vdss)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)
INFINEON IGT60R190D1SATMA1	157 pF	55.5 W	N-Channel	PG-HSOF-8-3	600 V	GaNFET (Gallium Nitride)	-55 °C	150 °C	1.6 V	8-PowerSFN	Surface Mount	12.5 A	-10 V

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