IDV06S60CXKSA1

Obsolete

Infineon Technologies

DIODE SIL CARB 600V 6A TO220FP

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Obsolete

Infineon Technologies

DIODE SIL CARB 600V 6A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	IDV06S60CXKSA1

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type
Infineon Technologies IDV06S60CXKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	6 A	80 µA	PG-TO220-2 Full Pack	0 ns	No Recovery Time	600 V	1.7 V	TO-220-2 Full Pack	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 6A Through Hole PG-TO220-2 Full Pack

Technical documentation and resources