BSN20BKR

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Nexperia USA Inc.

POWER MOSFET, TRENCH, N CHANNEL, 60 V, 265 MA, 2.1 OHM, SOT-23, SURFACE MOUNT

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BSN20BKR

Active

Nexperia USA Inc.

POWER MOSFET, TRENCH, N CHANNEL, 60 V, 265 MA, 2.1 OHM, SOT-23, SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

BSN20BK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BSN20BKR

Current - Continuous Drain (Id) (Ta)	265 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.49 nC
Input Capacitance (Ciss) (Max)	20.2 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	310 mW
Rds On (Max)	2.8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.4 V

BSN20BK Series

60 V, N-channel Trench MOSFET

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Package / Case	Power Dissipation (Max)	Package Name
Nexperia USA Inc. BSN20BKR	-55 °C	150 °C	60 V	MOSFET (Metal Oxide)	2.8 Ohm	20.2 pF	Surface Mount	265 mA	10 V	20 V	0.49 nC	1.4 V	N-Channel	SC-59 SOT-23-3 TO-236-3	310 mW	TO-236AB