BUK6D385-100EX

Active

Nexperia USA Inc.

MOSFET N-CH 100V 1.4A/3.7A 6DFN

Find alt

Alpha

BUK6D385-100EX

Active

Nexperia USA Inc.

MOSFET N-CH 100V 1.4A/3.7A 6DFN

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D385-100E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D385-100EX

Current - Continuous Drain (Id) (Ta)	1.4 A
Current - Continuous Drain (Id) (Tc)	3.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	195 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	15 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	385 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

BUK6D385-100E Series

Part	Technology	Package Name	Qualification	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Grade	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type
Nexperia USA Inc. BUK6D385-100EX	MOSFET (Metal Oxide)	DFN2020MD-6	AEC-Q101	N-Channel	10 V	4.5 V	-55 °C	175 °C	385 mOhm	Automotive	6.8 nC	195 pF	2 W 15 W	20 V	6-UDFN Exposed Pad	2.7 V	100 V	3.7 A	1.4 A	Surface Mount