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Description

General part information

JANTXV2N6193-Transistor Series

This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N6193
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)60
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39
Power - Max1 VA
Qualification561, MIL-PRF-19500
Transistor TypePNP
Vce Saturation (Max)1.2 V
Voltage - Collector Emitter Breakdown (Max)100 V

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