Specification	IRFH4210DTRPBF

Current - Continuous Drain (Id) (Ta)	44 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	77 nC
Input Capacitance (Ciss) (Max)	4812 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	PQFN
Package Width	6 mm
Power Dissipation (Max)	125 W, 3.5 W
Rds On (Max)	1.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

IRFH4210 Series

Part	Package Width	Package Name	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package / Case	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
INFINEON IRFH4210DTRPBF	6 mm	PQFN	5 mm	-55 °C	150 °C	N-Channel	8-PowerTDFN	Surface Mount	20 V	3.5 W 125 W	77 nC	2.1 V	44 A	10 V	4.5 V	1.1 mOhm	MOSFET (Metal Oxide)	25 V	4812 pF
INFINEON IRFH4210DTRPBF	6 mm	PQFN	5 mm	-55 °C	150 °C	N-Channel	8-PowerTDFN	Surface Mount	20 V	3.5 W 125 W	77 nC	2.1 V	44 A	10 V	4.5 V	1.1 mOhm	MOSFET (Metal Oxide)	25 V	4812 pF

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