IRF60B217

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Infineon Technologies

MOSFET, N-CH, 60V, 60A, TO-220AB

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Infineon Technologies

MOSFET, N-CH, 60V, 60A, TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF60B217

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	2230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.7 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Infineon Technologies IRF60B217	60 V	6 V 10 V	83 W	TO-220-3	60 A	TO-220AB	20 V	2230 pF	-55 °C	175 ░C	N-Channel	9 mOhm	MOSFET (Metal Oxide)	3.7 V	66 nC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 60A (Tc) 83W (Tc) Through Hole TO-220AB

Technical documentation and resources