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IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 7.6 MOHM;

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IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 7.6 MOHM;

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Description

General part information

IPP076 Series

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP076N12N3GXKSA1
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)101 nC, 101 nC
Input Capacitance (Ciss) (Max)6640 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3
Power Dissipation (Max)188 W
Rds On (Max)7.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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