Specification	SSM6K818R,LF

Current - Continuous Drain (Id) (Ta)	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Qualification	AEC-Q101
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

SSM6K818R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 15 A, 0.0089 Ω@10V, TSOP6F

Part	Operating Temperature	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max)	Package Name	FET Type	Qualification	Mounting Type	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Grade	Rds On (Max)
Toshiba Semiconductor and Storage SSM6K818R,LF	150 °C	10 V	4.5 V	6-SMD Flat Leads	20 V	1.5 W	30 V	MOSFET (Metal Oxide)	2.1 V	6-TSOP-F	N-Channel	AEC-Q101	Surface Mount	15 A	1130 pF	7.5 nC	Automotive	12 mOhm

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