MMIX1T600N04T2

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IXYS

MOSFET N-CH 40V 600A 24SMPD

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IXYS

MOSFET N-CH 40V 600A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1T600N04T2

Current - Continuous Drain (Id) @ 25°C	600 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	590 nC
Input Capacitance (Ciss) (Max) @ Vds	40000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Mounting Type
IXYS MMIX1T600N04T2	24-SMPD	1.3 mOhm	830 W	40000 pF	-55 °C	175 ░C	600 A	590 nC	24-PowerSMD 21 Leads	10 V	3.5 V	20 V	N-Channel	MOSFET (Metal Oxide)	40 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 600A (Tc) 830W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

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