IPDD60R102G7XTMA1

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INFINEON

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 102 MOHM; HIGHEST PERFORMANCE

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IPDD60R102G7XTMA1

LTB

INFINEON

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 102 MOHM; HIGHEST PERFORMANCE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPDD60 Series

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology600 V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Technical Specifications

Parameters and characteristics for this part

Specification	IPDD60R102G7XTMA1

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	10-PowerSOP Module
Package Name	PG-HDSOP-10-1
Power Dissipation (Max)	139 W
Rds On (Max)	102 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPDD60 Series

Part	Gate Charge (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Package Name	Input Capacitance (Ciss) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPDD60R075CFD7XTMA1	51 nC	20 V	40 A	4.5 V	266 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	2102 pF	Surface Mount	-55 °C	150 °C	75 mOhm 75 mOhm	N-Channel
INFINEON IPDD60R170CFD7XTMA1	23 nC	20 V	19 A	4.5 V	137 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	1016 pF	Surface Mount	-55 °C	150 °C	170 mOhm	N-Channel
INFINEON IPDD60R145CFD7XTMA1	28 nC	20 V	24 A	4.5 V	160 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	1199 pF	Surface Mount	-55 °C	150 °C	145 mOhm	N-Channel
INFINEON IPDD60R055CFD7XTMA1	67 nC	20 V	52 A	4.5 V	329 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	2724 pF	Surface Mount	-55 °C	150 °C	55 mOhm	N-Channel
INFINEON IPDD60R150G7XTMA1	23 nC	20 V	16 A	4 V	95 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	902 pF	Surface Mount	-55 °C	150 °C	150 mOhm	N-Channel	10 V
INFINEON IPDD60R050G7XTMA1	68 nC	20 V	47 A	4 V	278 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	2670 pF	Surface Mount	-55 °C	150 °C	50 mOhm	N-Channel	10 V
INFINEON IPDD60R045CFD7XTMA1	79 nC	20 V	61 A	4.5 V	379 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	3194 pF	Surface Mount	-55 °C	150 °C	45 mOhm	N-Channel
INFINEON IPDD60R102G7XTMA1	34 nC	20 V	23 A	4 V	139 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1		Surface Mount	-55 °C	150 °C	102 mOhm	N-Channel	10 V
INFINEON IPDD60R125G7XTMA1	27 nC	20 V	20 A	4 V	120 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	1080 pF	Surface Mount	-55 °C	150 °C	125 mOhm	N-Channel	10 V
INFINEON IPDD60R090CFD7XTMA1	42 nC	20 V	33 A	4.5 V	227 W	10-PowerSOP Module	600 V	MOSFET (Metal Oxide)	PG-HDSOP-10-1	1747 pF	Surface Mount	-55 °C	150 °C	90 mOhm	N-Channel

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPDD60R102G7XTMA1 | Datasheet

Technical Data Sheet EN